FIB – Helios 5 UC+ Triple Beam for Materials Science

The Thermo Scientific™ Helios™ 5 UC DualBeam is part of the fifth generation of the industry-leading Helios DualBeam family. It is carefully designed to meet the needs of scientists and engineers, combining the innovative Elstar™ electron column with high-current UC+ technology for extreme high-resolution imaging and the highest materials contrast with the superior Thermo Scientific Tomahawk HT Focused Ion Beam (FIB) Column for the fastest, easiest and most precise high-quality sample preparation. In addition to the most advanced electron and ion optics, the Helios 5 UC DualBeam incorporates a suite of state of-the-art technologies that enables simple and consistent high resolution S/TEM and Atom Probe Tomography (APT) sample preparation, as well as the highest-quality subsurface and 3D characterization, even on the most challenging samples.

The FIB is equipped with a low-energy ion polishing solution for localized surface cleaning at very low energy with Ar+ ions. The new Thermo Scientific μPolisher System boasts a great number of potential applications, including fine polishing of the sample surface in order to obtain the highest quality and removal of residual hydrocarbons from the sample surface prior to high-resolution TEM/STEM  imaging.

 

To be delivered on May 2023

Performances of Beyondnano Helios 5 UC

Beyond Nano HELIOS 5 UC+ FIB plus Ar+

μPolisher

Beam Energy (KeV) e- beam resolution (nm) Ga+ beam resolution (nm)
30 0.6 2.5
1 0.7
0.5 1

Configuration

Electron beam parameter 

  • electron beam UC+ monochromator technology
  • accelerating voltage range: 350 V – 30 kV
  • current range: 0.8 pA to 100 nA
  • landing energy range: 20 eV – 30 keV
  • maximum horizontal field width: 2.3 mm at 4 mm WD
  • user-alignments-free technology
  • Integrated Fast Beam Blanker
  • Beam deceleration with stage bias from 0 V to -4 kV

Ion beam parameter

  •  Tomahawk HT Ion Column
  • current range: 1 pA – 100 nA
  • Accelerating voltage range: 500 V – 30 kV
  • Time-of-flight (TOF) correction
  • 15-position aperture strip
  • Max. horizontal field width: 0.9 mm at beam coincidence point

Ar+ μPolisher System

  • ions energy can be varied in the range of 20 to 500 V