The equipments available at the Beyond-Nano Lab_POWER&RF make possibile to develop:
- new SiC-based epitaxial materials of large area up to 200 mm;
- low cost alternative solutions for conductive SiC substrates;
- new high permittivity dielectrics for SiC (MOSFET) and GaN (HEMTs) transistors;
- materials and technological approaches for vertical GaN devices, based either on bulk GaN or on new substrate architectures;
- GaN “normally-off” HEMT materials and devices, both on silicon substrates and on SiC substrates for RF applications in the field of mobile telephony;
- new ultra-wide band-gap (UWBG) semiconductor materials for power and high-frequency electronics.
In the medium-long term the combination of the advanced functionalities of 2D materials with some peculiar properties of SiC and GaN (resistance to radiation, biocompatibility, presence of color centers within the wide band gap) will open the way to new applications in fields beyond power electronics, such as digital devices for aerospace, bio-sensors (sensor chips for early screening of multifactorial diseases) and quantum technologies (single photon emitters in SiC or h –BN).
