Lab_MAT

The morphological and electrical characterization with high spatial resolution available at Lab_MAT represents a key element for understanding basic properties of materials and for tackling critical issues associated with the processes for manufacturing devices. As an example, Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy can be successfully used to obtain two-dimensional maps of carrier concentration in silicon carbide and gallium nitride, and allow the determination of the electrical activation of dopant atoms introduced into the semiconductor structure by ion implantation or during epitaxial growth. The Conductive–Atomic Force Microscopy technique offers the possibility to investigate on a local scale the properties of the metal/semiconductor (ohmic and Schottky contacts) and insulator/semiconductor interfaces, fundamental elements of silicon carbide and gallium nitride power devices. Extremely important is the presence of a transmission electron microscope with a spatial resolution below 1 Ångstrom and an energy resolution of 0.3 eV, for the atomic resolution analysis of two-dimensional and carbon-based materials (graphene, carbon nanotubes, phosphorene…).